advanced power p-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss -60v simple drive requirement r ds(on) 160m fast switching characteristic i d -9a halogen free & rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 5 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice -60 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v thermal data parameter storage temperature range -55 to 150 -55 to 150 201212031 1 operating junction temperature range halogen-free product AP9578GI-HF rating 1.92 + 25 -9 total power dissipation -36 -5.7 pulsed drain current 1 25 total power dissipation continuous drain current, v gs @ 10v g d s g d s to-220cfm(i) ap9578 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-220cfm package is widely preferred for all commercial- industrial through hole applications. the mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
AP9578GI-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-5a - - 160 m v gs =-4.5v, i d =-3a - - 200 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-5a - 8 - s i dss drain-source leakage current v ds =-48v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 25v, v ds =0v - - + 100 na q g total gate charge i d =-5a - 9 16 nc q gs gate-source charge v ds =-48v - 2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 5 - nc t d(on) turn-on delay time v ds =-30v - 9 - ns t r rise time i d =-5a - 12 - ns t d(off) turn-off delay time r g =3.3 -32- ns t f fall time v gs =-10v - 27 - ns c iss input capacitance v gs =0v - 760 1220 pf c oss output capacitance v ds =-25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 60 - pf r g gate resistance f=1.0mhz - 10 20 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-5a, v gs =0v - - -1.3 v t rr reverse recovery time i s =-5a, v gs =0v, - 41 - ns q rr reverse recovery charge di/dt=-100a/s - 83 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2
AP9578GI-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 125 135 145 155 165 175 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-3a t c =25 o c 0 10 20 30 0481216 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v - 7 .0v - 5 .0v - 4.5 v v g = - 3.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -5a v g = -10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) 0 4 8 12 16 20 24 0 4 8 12 16 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -5.0v -4.5v v g = -3.0v
AP9578GI-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 0 4 8 12 16 20 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -48v i d = -5a 0 200 400 600 800 1000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 1 10 100 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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